IPF042N10NF2SATMA1

Infineon Technologies

IPF042N10NF2SATMA1

Datasheet

Analog & Power

MOSFET

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.25mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4000 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesStrongIRFET™ 2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 93µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 139A (Tc)
Max Power Dissipation3.8W (Ta), 167W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackagePG-TO263-7

Environmental

Operating Temperature-55°C ~ 175°C (TJ)