IPF039N08NF2SATMA1

Infineon Technologies

IPF039N08NF2SATMA1

Datasheet

Analog & Power

TRENCH 40<-<100V PG-TO263-7

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.9mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3800 pF @ 40 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesStrongIRFET™ 2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 85µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C126A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackagePG-TO263-7-14

Environmental

Operating Temperature-55°C ~ 175°C (TJ)