IPDD60R190G7XTMA1

Infineon Technologies

IPDD60R190G7XTMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 13A HDSOP-10

Active10-PowerSOP ModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 4.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds718 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ G7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 210µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Max Power Dissipation76W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case10-PowerSOP Module
Supplier Device PackagePG-HDSOP-10-1

Environmental

Operating Temperature-55°C ~ 150°C (TJ)