IPD90P03P4L04ATMA2

Infineon Technologies

IPD90P03P4L04ATMA2

Datasheet

Analog & Power

MOSFET P-CH 30V 90A TO252-31

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.1mOhm @ 90A, 10V
Base Product NumberIPD90P
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11300 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, OptiMOS®-P2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+5V, -16V
Vgs(th) (Max) @ Id2V @ 253µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Max Power Dissipation137W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3-11

Environmental

Operating Temperature-55°C~175°C(TJ)