IPD90P03P404ATMA2

Infineon Technologies

IPD90P03P404ATMA2

Datasheet

Analog & Power

MOSFET P-CH 30V 90A TO252-31

ActiveTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.5mOhm @ 90A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10300 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesOptiMOS®-P2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 253µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Max Power Dissipation137W (Tc)

Mechanical

Supplier Device PackagePG-TO252-3-11

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101