IPD85P04P407ATMA1

Infineon Technologies

IPD85P04P407ATMA1

Datasheet

Analog & Power

MOSFET P-CH 40V 85A TO252-3

DiscontinuedTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.3mOhm @ 85A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6085 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 150µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Max Power Dissipation88W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101