IPD80R2K7C3AATMA1

Infineon Technologies

IPD80R2K7C3AATMA1

Datasheet

Analog & Power

MOSFET N-CH TO252-3

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.7Ohm @ 1.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 250µA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Max Power Dissipation42W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-40°C ~ 150°C (TJ)
QualificationAEC-Q101