IPD80R1K2P7ATMA1

Infineon Technologies

IPD80R1K2P7ATMA1

Datasheet

Analog & Power

MOSFET N-CH 800V 4.5A TO252-3

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2Ohm @ 1.7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 500 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ P7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 80µA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Max Power Dissipation37W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3

Environmental

Operating Temperature-55°C~150°C(TJ)