IPD70P04P409ATMA1

Infineon Technologies

IPD70P04P409ATMA1

Datasheet

Analog & Power

MOSFET P-CH 40V 73A TO252-3

DiscontinuedTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.9mOhm @ 70A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4810 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 120µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C73A (Tc)
Max Power Dissipation75W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101