IPD65R380E6

Name: IPD65R380E6
Brand: Infineon Technologies

Analog & Power

MOSFET N-CH 650V 10.6A TO252-3

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	380mOhm @ 3.2A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 100 V
Manufacturer	Infineon Technologies
Mounting Type	Surface Mount
Product Status	Active
Series	CoolMOS™ E6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 320µA

Drain-to-Source Voltage	650 V
Current - Continuous Drain (Id) @ 25°C	10.6A (Tc)
Max Power Dissipation	83W (Tc)

Operating Temperature	-55°C~150°C(TJ)