IPD65R1K5CEAUMA1

Infineon Technologies

IPD65R1K5CEAUMA1

Datasheet

Analog & Power

MOSFET N-CH 700V 5.2A TO252-3

ObsoleteTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.5Ohm @ 1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds225 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 100µA

Electrical

Drain-to-Source Voltage700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5.2A (Tc)
Max Power Dissipation53W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3

Environmental

Operating Temperature-40°C ~ 150°C (TJ)