Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.8A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Discontinued at |
| Series | CoolMOS™ E6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 300µA |
| Drain-to-Source Voltage | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Max Power Dissipation | 83W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3 |
| Operating Temperature | -55°C ~ 155°C (TJ) |
|---|