IPD60R210PFD7SAUMA1

Infineon Technologies

IPD60R210PFD7SAUMA1

Datasheet

Analog & Power

MOSFET N-CH 650V 16A TO252-3

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs210mOhm @ 4.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1015 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™PFD7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 240µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Max Power Dissipation64W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3-344

Environmental

Operating Temperature-40°C~150°C(TJ)