IPD60R1K4C6

Infineon Technologies

IPD60R1K4C6

Datasheet

Analog & Power

MOSFET N-CH 600V 3.2A TO252-3

DiscontinuedTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.4Ohm @ 1.1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusDiscontinued at
SeriesCoolMOS™ C6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 90µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.2A (Tc)
Max Power Dissipation28.4W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)