IPD50R500CE

Infineon Technologies

IPD50R500CE

Analog & Power

IPD50R500 - 500V COOLMOS N-CHANN

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs500mOhm @ 2.3A, 13V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds433 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 200µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)13V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Max Power Dissipation57W (Tc)

Mechanical

PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3-344

Environmental

Operating Temperature-55°C~150°C(TJ)