IPD50R280CEAUMA1

Infineon Technologies

IPD50R280CEAUMA1

Datasheet

Analog & Power

MOSFET N-CH 500V 13A TO252

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs280mOhm @ 4.2A, 13V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds773 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ CE
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 350µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)13V
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Max Power Dissipation119W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)