IPD50N03S4L06ATMA1

Infineon Technologies

IPD50N03S4L06ATMA1

Analog & Power

MOSFET N-CH 30V 50A TO252-31

ActiveTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2330 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.2V @ 20µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Max Power Dissipation56W (Tc)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101