IPD30N12S3L31ATMA1

Infineon Technologies

IPD30N12S3L31ATMA1

Datasheet

Analog & Power

MOSFET N-CHANNEL_100+

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs31mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1970 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
Series*
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 29µA

Electrical

Drain-to-Source Voltage120 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Max Power Dissipation57W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101