IPD18DP10LMATMA1

Infineon Technologies

IPD18DP10LMATMA1

Datasheet

Analog & Power

TRENCH >=100V PG-TO252-3

ActiveTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs178mOhm @ 13A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
Series448
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 1.04mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta), 13.9A (Tc)
Max Power Dissipation3W (Ta), 83W (Tc)

Mechanical

Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3

Environmental

Operating Temperature-55°C ~ 175°C (TJ)