IPD068P03L3GATMA1

Infineon Technologies

IPD068P03L3GATMA1

Datasheet

Analog & Power

MOSFET P-CH 30V 70A TO252-3

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.8mOhm @ 70A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7720 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 150µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Max Power Dissipation100W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3

Environmental

Operating Temperature-55°C~175°C(TJ)