IPC302N08N3X1SA1

Infineon Technologies

IPC302N08N3X1SA1

Datasheet

Analog & Power

MOSFET N-CH 80V 1A SAWN ON FOIL

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs100mOhm @ 2A, 10V
Base Product NumberIPC302N
FET TypeN-Channel
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5V @ 270µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1A (Tj)

Mechanical

PackageBulk
Package / CaseDie
Supplier Device PackageSawn on foil