IPC020N10L3X1SA1

Infineon Technologies

IPC020N10L3X1SA1

Datasheet

Analog & Power

MOSFET N-CH 100V 1A SAWN ON FOIL

ActiveDieAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs100mOhm @ 2A, 4.5V
Base Product NumberIPC020N
FET TypeN-Channel
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 12µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Current - Continuous Drain (Id) @ 25°C1A (Tj)

Mechanical

PackageBulk
Package / CaseDie
Supplier Device PackageSawn on foil