IPBE65R190CFD7AATMA1

Infineon Technologies

IPBE65R190CFD7AATMA1

Datasheet

Analog & Power

MOSFET N-CH 650V 14A TO263-7

ActiveTO-263-8, D2PAK (7 Leads + Tab), TO-263CAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 6.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1291 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 320µA

Electrical

Drain-to-Source Voltage650 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Max Power Dissipation77W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackagePG-TO263-7-11

Environmental

GradeAutomotive
Operating Temperature-40°C ~ 150°C (TJ)
QualificationAEC-Q101