IPBE65R075CFD7AATMA1

Infineon Technologies

IPBE65R075CFD7AATMA1

Datasheet

Analog & Power

MOSFET N-CH 650V 32A TO263-7

ActiveTO-263-7, D²Pak (6 Leads + Tab), TO-263CBAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 16.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3288 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, CoolMOS™ CFD7A
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 820µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Max Power Dissipation171W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device PackagePG-TO263-7-3-10

Environmental

Operating Temperature-40°C~150°C(TJ)