IPB95R310PFD7ATMA1

Infineon Technologies

IPB95R310PFD7ATMA1

Datasheet

Analog & Power

LOW POWER_NEW

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs310mOhm @ 10.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1765 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.5V @ 520µA

Electrical

Drain-to-Source Voltage950 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C17.5A (Tc)
Max Power Dissipation125W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackagePG-TO263-3-2

Environmental

Operating Temperature-55°C ~ 150°C (TJ)