IPB80P04P405ATMA2

Infineon Technologies

IPB80P04P405ATMA2

Datasheet

Analog & Power

MOSFET P-CH 40V 80A TO263-3

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.2mOhm @ 80A, 10V
Base Product NumberIPB80P
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10300 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, OptiMOS®-P2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Max Power Dissipation125W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3-2

Environmental

Operating Temperature-55°C~175°C(TJ)