IPB80N04S3-04

Name: IPB80N04S3-04
Brand: Infineon Technologies

Analog & Power

MOSFET N-CH 40V 80A TO263-3

ActiveTO-263-4, D²Pak (3 Leads + Tab), TO-263AAAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	4.1mOhm @ 80A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 25 V
Manufacturer	Infineon Technologies
Mounting Type	Surface Mount
Product Status	Active
Series	Automotive, AEC-Q101, OptiMOS™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 90µA

Drain-to-Source Voltage	40 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Max Power Dissipation	136W (Tc)

Operating Temperature	-55°C~175°C(TJ)