IPB65R190CFD7AATMA1

Infineon Technologies

IPB65R190CFD7AATMA1

Datasheet

Analog & Power

MOSFET N-CH 650V 14A TO263-3

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 6.4A, 10V
Base Product NumberIPB65R190
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1291 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, CoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 320µA

Electrical

Drain-to-Source Voltage650 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Max Power Dissipation77W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3

Environmental

Operating Temperature-40°C~150°C(TJ)