IPB60R190C6ATMA1

Infineon Technologies

IPB60R190C6ATMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 20.2A D2PAK

DiscontinuedTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs190mOhm @ 9.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesCoolMOS™ C6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 630µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Max Power Dissipation151W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)