IPB45P03P4L11ATMA1

Infineon Technologies

IPB45P03P4L11ATMA1

Datasheet

Analog & Power

MOSFET P-CH 30V 45A TO263-3

DiscontinuedTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10.8mOhm @ 45A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3770 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusDiscontinued at
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+5V, -16V
Vgs(th) (Max) @ Id2V @ 85µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Max Power Dissipation58W (Tc)

Mechanical

PackageTape & Reel (TR)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101