IPB180P04P403ATMA2

Infineon Technologies

IPB180P04P403ATMA2

Datasheet

Analog & Power

MOSFET P-CH 40V 180A TO263-7

ActiveTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.8mOhm @ 100A, 10V
Base Product NumberIPB180
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds17640 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, OptiMOS®-P2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 410µA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackagePG-TO263-7-3

Environmental

Operating Temperature-55°C~175°C(TJ)