IPB110N06L G

Infineon Technologies

IPB110N06L G

Analog & Power

MOSFET N-CH 60V 78A TO-263

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11mOhm @ 78A, 10V
Base Product NumberIPB110N
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 94µA

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C78A (Tc)

Mechanical

PackageCut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3-2