IPB024N10N5ATMA1

Infineon Technologies

IPB024N10N5ATMA1

Datasheet

Analog & Power

MOSFET N-CH 100V 180A TO263-7

ActiveTO-263-8, D²Pak (7 Leads + Tab), TO-263CAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.4mOhm @ 90A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10200 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 183µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Max Power Dissipation250W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device PackagePG-TO263-7

Environmental

Operating Temperature-55°C ~ 175°C (TJ)