IPB019N08N5ATMA1

Infineon Technologies

IPB019N08N5ATMA1

Datasheet

Analog & Power

MOSFET N-CH 80V 180A TO263-7

ActiveTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.95mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8970 pF @ 40 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™ 5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 154µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Max Power Dissipation224W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackagePG-TO263-7

Environmental

Operating Temperature-55°C ~ 175°C (TJ)