IPB018N06NF2SATMA1

Infineon Technologies

IPB018N06NF2SATMA1

Datasheet

Analog & Power

TRENCH 40<-<100V

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.8mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7300 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesStrongIRFET™2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.3V @ 129µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C34A (Ta), 187A (Tc)
Max Power Dissipation3.8W (Ta), 188W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackagePG-TO263-3

Environmental

Operating Temperature-55°C ~ 175°C (TJ)