IPA90R800C3

Infineon Technologies

IPA90R800C3

Analog & Power

MOSFET N-CH 900V 6.9A TO220

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs800mOhm @ 4.1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 460µA

Electrical

Drain-to-Source Voltage900 V
Current - Continuous Drain (Id) @ 25°C6.9A (Tc)
Max Power Dissipation33W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackagePG-TO220 Full Pack

Environmental

Operating Temperature-55°C~150°C(TJ)