IPA80R450P7XKSA1

Infineon Technologies

IPA80R450P7XKSA1

Datasheet

Analog & Power

MOSFET N-CH 800V 11A TO220-3F

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs450mOhm @ 4.5A, 10V
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 500 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 220µA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation29W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackagePG-TO220-3-31

Environmental

Operating Temperature-55°C~150°C(TJ)