Structured electrical, mechanical and environmental parameters from imported product attributes.
| FET Type | N-Channel |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 744 pF @ 400 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | CoolSiC™ |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -5V |
| Drain-to-Source Voltage | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Max Power Dissipation | 96W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4-3 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|