IMZ120R045M1XKSA1

Infineon Technologies

IMZ120R045M1XKSA1

Datasheet

Analog & Power

SICFET N-CH 1200V 52A TO247-4

DiscontinuedTO-247-4Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs59mOhm @ 20A, 15V
FET FeatureCurrent Sensing
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 800 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesCoolSiC™
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+20V, -10V
Vgs(th) (Max) @ Id5.7V @ 10mA

Electrical

Drain-to-Source Voltage1200 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Max Power Dissipation228W (Tc)

Mechanical

PackageTray
Package / CaseTO-247-4
Supplier Device PackagePG-TO247-4-1

Environmental

Operating Temperature-55°C~175°C(TJ)