Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 60A, 18V |
|---|---|
| Base Product Number | IMYH200 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 246 nC @ 18 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | CoolSiC™ |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +20V, -7V |
| Vgs(th) (Max) @ Id | 5.5V @ 48mA |
| Drain-to-Source Voltage | 2000 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 123A (Tc) |
| Max Power Dissipation | 552W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4-U04 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|