IMW65R107M1HXKSA1

Name: IMW65R107M1HXKSA1
Brand: Infineon Technologies

Analog & Power

MOSFET 650V NCH SIC TRENCH

ActiveTO-247-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	142mOhm @ 8.9A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	496 pF @ 400 V
Manufacturer	Infineon Technologies
Mounting Type	Through Hole
Packaging	Tube
Part Status	Active
Series	448
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+23V, -5V
Vgs(th) (Max) @ Id	5.7V @ 3mA

Drain-to-Source Voltage	650 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Max Power Dissipation	75W (Tc)

Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3-41

Operating Temperature	-55°C ~ 150°C (TJ)