Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 117mOhm @ 8.5A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 707 pF @ 800 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | CoolSiC™ |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -7V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
| Drain-to-Source Voltage | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Max Power Dissipation | 115W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|