IMW120R045M1XKSA1

Name: IMW120R045M1XKSA1
Brand: Infineon Technologies

Analog & Power

SICFET N-CH 1.2KV 52A TO247-3

DiscontinuedTO-247-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 15V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 800 V
Manufacturer	Infineon Technologies
Mounting Type	Through Hole
Product Status	Not For New Designs
Series	CoolSiC™
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+20V, -10V
Vgs(th) (Max) @ Id	5.7V @ 10mA

Drain-to-Source Voltage	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Max Power Dissipation	228W (Tc)

Operating Temperature	-55°C ~ 175°C (TJ)