Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 18.4mOhm @ 54.3A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4580 nF @ 25 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | CoolSiC™ |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Vgs(th) (Max) @ Id | 5.2V @ 23.4mA |
| Drain-to-Source Voltage | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 127A (Tc) |
| Max Power Dissipation | 455W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|