IMBG120R045M1HXTMA1

Name: IMBG120R045M1HXTMA1
Brand: Infineon Technologies

Analog & Power

SICFET N-CH 1.2KV 47A TO263

ActiveTO-263-8, D²Pak (7 Leads + Tab), TO-263CAAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	63mOhm @ 16A, 18V
Base Product Number	IMBG120
FET Feature	Standard
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	1527 pF @ 800 V
Manufacturer	Infineon Technologies
Mounting Type	Surface Mount
Product Status	Active
Series	CoolSiC™
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+18V, -15V
Vgs(th) (Max) @ Id	5.7V @ 7.5mA

Drain-to-Source Voltage	1200 V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Max Power Dissipation	227W (Tc)

Operating Temperature	-55°C~175°C(TJ)