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Home/Products/Discrete Semiconductor Products/Transistors - IGBTs - Single/IKW50N60H3
IKW50N60H3

Infineon Technologies

IKW50N60H3

Analog & Power

IKW50N60 - DISCRETE IGBT WITH AN

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge315 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)130 ns
SeriesTRENCHSTOP™
Switching Energy1.45mJ (on), 910µJ (off)
Td (on/off) @ 25°C23ns/235ns
Test Condition400V, 50A, 7Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 50A

Electrical

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)100 A
Current - Collector Pulsed (Icm)200 A
Power - Max333 W

Mechanical

PackageBulk
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-41

Environmental

Operating Temperature-40°C~175°C(TJ)

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