IGT40R070D1ATMA1

Infineon Technologies

IGT40R070D1ATMA1

Datasheet

Analog & Power

GAN HV

Discontinued8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds382 pF @ 320 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusDiscontinued at
SeriesCoolGaN™
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)-10V
Vgs(th) (Max) @ Id1.6V @ 2.6mA

Electrical

Drain-to-Source Voltage400 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Max Power Dissipation125W (Tc)

Mechanical

PackageBulk
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)