IGLR60R190D1XUMA1

Infineon Technologies

IGLR60R190D1XUMA1

Datasheet

Analog & Power

GAN HV

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds157 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolGaN™
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)-10V
Vgs(th) (Max) @ Id1.6V @ 960µA

Electrical

Drain-to-Source Voltage600 V
Current - Continuous Drain (Id) @ 25°C12.8A (Tc)
Max Power Dissipation55.5W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TSON-8-6

Environmental

Operating Temperature-40°C ~ 150°C (TJ)