IGLD60R190D1AUMA1

Infineon Technologies

IGLD60R190D1AUMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 10A LSON-8

Obsolete8-LDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberIGLD60
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds157 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesCoolGaN™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-10V
Vgs(th) (Max) @ Id1.6V @ 960µA

Electrical

Drain-to-Source Voltage600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Max Power Dissipation62.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-LDFN Exposed Pad
Supplier Device PackagePG-LSON-8-1

Environmental

Operating Temperature-55°C~150°C(TJ)