IGLD60R070D1AUMA1

Infineon Technologies

IGLD60R070D1AUMA1

Datasheet

Analog & Power

GANFET N-CH 600V 15A LSON-8

Obsolete8-LDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberIGLD60
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesCoolGaN™
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)-10V
Vgs(th) (Max) @ Id1.6V @ 2.6mA

Electrical

Drain-to-Source Voltage600 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Max Power Dissipation114W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-LDFN Exposed Pad
Supplier Device PackagePG-LSON-8-1

Environmental

Operating Temperature-55°C ~ 150°C (TJ)